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Загальна кількість знайдених документів : 5
Представлено документи з 1 до 5
1.

Grynko D. O. 
Injection Spectroscopy of Deep Traps in Nanostructured Films of Cadmium Sulfide [Електронний ресурс] / D. O. Grynko, A. S. Opanasyuk, O. P. Dimitriev, P. S. Smertenko, O. M. Fedoryak, N. V. Tirkusova, Yu. V. Noskov, N. A. Ogurtsov, A. A. Pud // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2013. - Vol. 2, no. 1. - С. 01NTF41-01NTF41. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2013_2_1_43
Попередній перегляд:   Завантажити - 302.691 Kb    Зміст випуску     Цитування
2.

Dimitriev O. A. 
Piezoelectric Response of Cadmium Sulfide Nanorod Crystals Grown from Gas Phase by Using Ag and Au Catalyst [Електронний ресурс] / O. A. Dimitriev, D. A. Grynko, O. M. Fedoryak, M. Kratzer, O. B. Smirnov, P. S. Smertenko // Proceedings of the International Conference Nanomaterials: Applications and Properties. - 2014. - Vol. 3, no. 2. - С. 02NEA07-02NEA07. - Режим доступу: http://nbuv.gov.ua/UJRN/princon_2014_3_2_43
Попередній перегляд:   Завантажити - 675.011 Kb    Зміст випуску     Цитування
3.

Dimitriev O. P. 
Macroscopic versus microscopic photovoltaic response of heterojunctions based on mechanochemically prepared nanopowders of kesterite and n-type semiconductors [Електронний ресурс] / O. P. Dimitriev, D. O. Grynko, A. M. Fedoryak, T. P. Doroshenko, M. Kratzer, C. Teichert, Yu. V. Noskov, N. A. Ogurtsov, A. A. Pud, P. Balaz, M. Balaz, M. Tesinsky // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 4. - С. 418-423. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_4_6
Mechanochemically prepared nanopowder of selenium-free kesterite Cu2ZnSnS4 (CZTS) in combination with n-type semiconductors, i.e., CdS, ZnO and TiO2, was tested in planar and bulk-heterojunction solar cells. The samples have been studied by macroscopic current-voltage (I - V) measurements and Kelvin-probe atomic-force microscopy (KPFM). KPFM images taken under light illumination showed the distribution of the potential across the surface, with negative potential on the n-type semiconductor domains and positive potential on the CZTS domains, which indicated charge separation at the interface of the counterparts. The best result was found for the CdS-CZTS composition, which showed a potential difference between the domains up to 250 mV. These results were compared with the planar heterojunctions of CdS/CZTS and TiO2/CZTS, where CZTS nanopowder was pressed/deposited directly onto the surface of films of the corresponding n-type semiconductors. Again, I - V characteristics showed that cells based on CdS/CZTS heterojunctions have the best performance, with a photovoltage up to 200 mV and photocurrent densities up to 0,1 mA/cm<^>2. However, the carrier generation was found to occur mainly in the CdS semiconductor, while CZTS showed no photo-response and served as the hole-transporting layer only. It is concluded that sensitization of the kesterite powder obtained by mechanochemical method is necessary to improve the performance of the corresponding solar cells.
Попередній перегляд:   Завантажити - 233.964 Kb    Зміст випуску    Реферативна БД     Цитування
4.

Bogoslovskaya A. B. 
Luminescent analysis of the quality of CdS nanocrystals depending on technological parameters [Електронний ресурс] / A. B. Bogoslovskaya, D. O. Grynko, E. G. Bortchagovsky, O. I. Gudymenko // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 231-236. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_16
This work is devoted to luminescent investigations of CdS nanowhiskers grown in different technological approaches with variable parameters, allowing to control sizes and morphology of grown nanocrystals. Luminescence was used for the express analysis of the influence of technological parameters on the quality of grown crystals by comparison of band-edge and defect luminescent bands.
Попередній перегляд:   Завантажити - 536.982 Kb    Зміст випуску    Реферативна БД     Цитування
5.

Bogoslovskaya A. B. 
Piezo-mechanical impedance of nanosized CdS single crystal [Електронний ресурс] / A. B. Bogoslovskaya, O. M. Khalimovskyy, D. O. Grynko // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 4. - С. 479-485. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_4_18
The design of a piezo-mechanical device based on nanosized CdS single crystal is a challenging task for demonstration of both the technological capabilities of crystal growth control in order to form simple sensor device topologies and the integrated usage of unique material properties with bottom-up approach. Analysis of luminescence spectra of CdS nanocrystals grown from the gas phase at the temperature <$E400~symbol Р roman C> in the quasi-closed volume revealed that doping takes place with tin, as a component of ITO conductive film, simultaneously with doping with gold or silver from catalyze droplets. Piezo-mechanical longitudinal vibrations along the main symmetry axis of wurtzite-type single crystal have been presented in the continuous medium approximation based on experimental values of the nanocrystal piezo-module. Theoretical analysis of the frequency dependence of resonance oscillations for the nanosized beam-type piezo-mechanical resonators based on the CdS nanocrystal enabled to ascertain the equivalent RLC two-pole and values of the equivalent elements L and C prognosticated: there are high values of L - tens and hundreds of henry and very small values of the series capacitance of the order of femto- and attofarads. Below the resonance, the impedance of the crystal reaches gigaohms and has an inductive character.
Попередній перегляд:   Завантажити - 585.678 Kb    Зміст випуску    Реферативна БД     Цитування
 
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